inquiry
Leave Your Message
China Suppliers X-band High Gain Low-Noise Amplifier Factory for Radar and Satellite Communication
Hot Products
X-band High Gain Low-Noise Amplifer.PNG

China Suppliers X-band High Gain Low-Noise Amplifier Factory for Radar and Satellite Communication

,

The X-band High Gain Low-Noise Amplifier is a top-tier solution designed for exceptional signal amplification with minimal noise, ensuring high-fidelity performance across a variety of demanding applications. Operating within the X-band frequency range, this amplifier provides significant gain while keeping a low noise figure, making it an ideal choice for radar, satellite communication, and advanced electronic warfare systems. Manufactured in China, our factory utilizes cutting-edge technology to produce this compact and efficient amplifier. Its high linearity and reliable operation under various environmental conditions enhance system sensitivity and signal quality, catering to the needs of critical high-frequency applications. Partner with us as trusted suppliers for high-performance electronic components that meet stringent industry standards.

,
    Products Categories
    Featured News
    White Fused Alumina Market

    White Fused Alumina Market
    What Is the Compound Name for Al2O3?

    What Is the Compound Name for Al2O3?
    Si3N4 Refractive Index: Understanding the Optical Properties of Silicon Nitride

    Si3N4 Refractive Index: Understanding...
    Best Suppliers for AlN Substrates

    Best Suppliers for AlN Substrates
    01020304050607
    Key Features

    This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.

    Technical Specifications

    Process 65nm CMOS
    Operating Frequency (GHz) 8.5-11.5
    Gain (dB) @10 GHz 22.9
    Noise Figure (dB) @10 GHz 2.8
    Power Consumption (mW) 49
    Core Area (mm²) 0.24

    Frequently Asked Questions

    What semiconductor process technology is used for this LNA?
    This Low Noise Amplifier (LNA) is fabricated using advanced 65nm CMOS process technology.
    What is the operating frequency range of the device?
    The device operates across a frequency bandwidth of 8.5 GHz to 11.5 GHz.
    What are the gain and noise figure specifications at 10 GHz?
    At 10 GHz, it achieves a high gain of 22.9 dB alongside a low noise figure of 2.8 dB.
    How power-efficient and compact is this design?
    The LNA consumes low power at 49 mW and features an ultra-compact core area of just 0.24 mm².
    What key applications is this product ideal for?
    It is an optimal solution for cost-effective X-band phased array radars, satellite communication receivers, and high-performance wireless systems.

    Get in touch

    Your email address will not be published. Required fields are marked *