LTCC
MLCC
China X-band High Gain Low-Noise Amplifier Factory | Reliable Suppliers for Advanced Signal Amplification
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 8.5-11.5 |
| Gain (dB) @10 GHz | 22.9 |
| Noise Figure (dB) @10 GHz | 2.8 |
| Power Consumption (mW) | 49 |
| Core Area (mm²) | 0.24 |
This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.
Frequently Asked Questions
What is the operating frequency range of this CMOS LNA?
This Low Noise Amplifier (LNA) operates in the frequency range of 8.5 to 11.5 GHz, making it perfectly suited for X-band applications.
What fabrication process is used for this chip?
The chip is fabricated using a standard, cost-effective 65nm CMOS process technology.
What are the gain and noise figure performance metrics at 10 GHz?
At 10 GHz, this LNA delivers a high gain of 22.9 dB while maintaining a low noise figure of 2.8 dB to ensure excellent signal sensitivity.
What is the power consumption and core area of the LNA?
The LNA features an ultra-compact core area of just 0.24 mm² and operates efficiently with a low power consumption of 49 mW.
What are the primary target applications for this LNA?
It is highly optimized for cost-effective X-band phased array radars, satellite communication receivers, and high-performance wireless systems.
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