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China X-band High Gain Low-Noise Amplifier - Reliable Suppliers and Factory for Radar and Communication Applications
Process
65nm CMOS
Operating Frequency
8.5-11.5 GHz
Gain @10 GHz
22.9 dB
Noise Figure @10 GHz
2.8 dB
Power Consumption
49 mW
Core Area
0.24 mm²
This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.
Frequently Asked Questions
What semiconductor process is used for this LNA?
This Low Noise Amplifier (LNA) is fabricated using an advanced and cost-effective 65nm CMOS process technology.
What is the operating frequency range of the CMOS LNA?
The device operates efficiently across the frequency range of 8.5 GHz to 11.5 GHz, making it suitable for X-band applications.
What are the key performance metrics of this LNA at 10 GHz?
At a center frequency of 10 GHz, this LNA achieves a high gain of 22.9 dB and maintains a low noise figure of 2.8 dB.
How much power does this CMOS LNA consume?
The LNA is designed for low power consumption, requiring only 49 mW during operation to support power-sensitive systems.
What is the physical size of this LNA chip?
It features an ultra-compact core area of just 0.24 mm², allowing for high-density integration in modern wireless systems.
What applications are best suited for this 65nm CMOS LNA?
It is highly recommended for cost-effective X-band phased array radars, satellite communication receivers, and high-performance wireless systems.
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