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China X-band High Gain Low-Noise Amplifier - Reliable Suppliers and Factory for Radar and Communication Systems
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Operating Frequency
8.5-11.5 GHz
📈
Gain @10 GHz
22.9 dB
🛡️
Noise Figure @10 GHz
2.8 dB
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Power Consumption
49 mW
This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.
| Parameter | Specification |
|---|---|
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 8.5-11.5 |
| Gain (dB) @10 GHz | 22.9 |
| Noise Figure (dB) @10 GHz | 2.8 |
| Power Consumption (mW) | 49 |
| Core Area (mm²) | 0.24 |
Frequently Asked Questions
What is the operating frequency range of this CMOS LNA?
This Low Noise Amplifier (LNA) operates within the frequency range of 8.5 to 11.5 GHz, making it ideal for X-band applications.
What fabrication process is used for this chip?
The LNA is fabricated using a standard, cost-effective 65nm CMOS semiconductor process.
What are the gain and noise figure performance specs at 10 GHz?
At a center frequency of 10 GHz, the LNA achieves a high gain of 22.9 dB and maintains a low noise figure of 2.8 dB.
How power-efficient is this LNA design?
The design is highly optimized for low power consumption, requiring only 49 mW during operation.
What is the physical size of the LNA core?
The LNA features an ultra-compact core area of just 0.24 mm², facilitating high-density system integration.
What are the primary target applications for this device?
It is primarily designed for cost-effective X-band phased array radars, satellite communication receivers, and high-performance wireless systems.
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