English
English French German Spanish Russian Japanese Korean Arabic Italian
inquiry
Leave Your Message
High Efficiency Ka-band Asymmetric Doherty Power Amplifier from China Suppliers - Factory Direct Solutions
Hot Products
Ka-band Asymmetric Doherty Power Amplifer.PNG

High Efficiency Ka-band Asymmetric Doherty Power Amplifier from China Suppliers - Factory Direct Solutions

,

The Ka-band Asymmetric Doherty Power Amplifier is engineered to achieve exceptional efficiency and remarkable linearity across extensive dynamic ranges in Ka-band communication systems. By employing an innovative asymmetric Doherty architecture, this amplifier optimizes the power distribution between the main and auxiliary amplifying pathways, greatly enhancing back-off efficiency and accommodating high peak-to-average power ratio (PAPR) signals. With low insertion loss, superior gain, and outstanding thermal stability, it is perfectly suited for applications in satellite communications, millimeter-wave 5G/6G links, phased-array transmitters, and high-performance RF front-ends. This advanced design ensures higher output power, lower energy consumption, and dependable long-term operation, making it an ideal choice for China-based suppliers and factory settings that demand high-performance solutions in challenging environments.

,
    Products Categories
    Featured News
    White Fused Alumina Market

    White Fused Alumina Market
    What Is the Compound Name for Al2O3?

    What Is the Compound Name for Al2O3?
    Si3N4 Refractive Index: Understanding the Optical Properties of Silicon Nitride

    Si3N4 Refractive Index: Understanding...
    Best Suppliers for AlN Substrates

    Best Suppliers for AlN Substrates
    01020304050607
    Key Features

    Frequency Range

    35 - 41 GHz

    Max PAE

    28.2% @ 38 GHz

    Core Area

    0.26 mm²

    Featuring a compact 0.26 mm² footprint, this 65nm CMOS Doherty PA delivers high efficiency (28.2% PAE) and linearity. Optimized for 35-41 GHz, it is ideal for cost-effective 5G mmWave and satellite phased array applications.

    Parameter Specification Value
    Process 65nm CMOS
    Operating Frequency (GHz) 35 - 41
    Gain (dB) @10 GHz 25
    Psat (dBm) @38 GHz 23.3
    OP1dB (dBm) @38 GHz 22.4
    PAEmax (%) @38 GHz 28.2
    Core Area (mm²) 0.26
    Frequently Asked Questions
    What semiconductor process is used for this power amplifier?
    This Doherty Power Amplifier is fabricated using a standard 65nm CMOS process, making it a highly cost-effective solution for integration.
    What is the operating frequency range of this device?
    The amplifier is optimized to operate across the 35 GHz to 41 GHz frequency band, targeting millimeter-wave applications.
    What is the peak Power Added Efficiency (PAE) and output power?
    At 38 GHz, the power amplifier achieves a maximum PAE of 28.2%, with a saturated output power (Psat) of 23.3 dBm and an output 1-dB compression point (OP1dB) of 22.4 dBm.
    What are the primary target applications for this Doherty PA?
    Due to its high efficiency and linear performance, it is ideal for 5G mmWave communication systems and satellite phased array applications.
    How compact is the core area of this integrated circuit?
    The power amplifier features an extremely compact footprint, with a core area of only 0.26 mm², enabling high-density integration.

    Get in touch

    Your email address will not be published. Required fields are marked *