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High Gain Low-Noise Amplifier for X-band Applications - China Suppliers & Factory Solutions
This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.
| Parameter Specification | Value / Performance |
|---|---|
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 8.5-11.5 |
| Gain (dB) @10 GHz | 22.9 |
| Noise Figure (dB) @10 GHz | 2.8 |
| Power Consumption (mW) | 49 |
| Core Area (mm²) | 0.24 |
Frequently Asked Questions
What is the manufacturing process used for this LNA?
This Low Noise Amplifier (LNA) is fabricated using a standard, cost-effective 65nm CMOS process technology.
What is the operating frequency range of this device?
The LNA operates within the frequency range of 8.5 GHz to 11.5 GHz, which covers key X-band applications.
How much gain and noise performance does it offer at 10 GHz?
At 10 GHz, the LNA delivers a high gain of 22.9 dB while maintaining a very low noise figure of 2.8 dB.
What are the power consumption and physical size of the LNA?
It features a low power consumption of 49 mW and is built on an ultra-compact core area of just 0.24 mm².
What are the primary target applications for this CMOS LNA?
It is highly optimized for cost-effective X-band phased array radars, satellite communication receivers, and various high-frequency wireless systems.
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