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High-Power Ka-Band Dual-Channel Amplifier from China Suppliers and Factory for Satellite and Radar Systems
Product Overview
This 65nm CMOS dual-channel PA combines high integration with 25.8 dB gain across 35-41 GHz. Featuring a compact 0.3 mm² footprint and 21.4 dBm output, it is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
| Parameter | Specification |
|---|---|
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 35-41 |
| Gain (dB) @10 GHz | 25.8 |
| Psat (dBm) @38 GHz | 21.4 |
| OP1dB (dBm) @38 GHz | 19.8 |
| PAEmax (%) @38 GHz | 21.9 |
| Core Area (mm²) | 0.3 |
Frequently Asked Questions
What semiconductor process is used for this Power Amplifier?
This dual-channel power amplifier is fabricated using a standard 65nm CMOS process, which enables high integration and cost-efficiency.
What is the operating frequency range of this PA?
The operating frequency range of this power amplifier is from 35 GHz to 41 GHz, covering key Ka-band and mmWave spectrums.
What are the output power capabilities at 38 GHz?
At 38 GHz, the power amplifier delivers a saturated output power (Psat) of 21.4 dBm and an output 1 dB compression point (OP1dB) of 19.8 dBm.
What is the maximum efficiency of this device?
The maximum Power Added Efficiency (PAEmax) achieved by this device is 21.9% at an operating frequency of 38 GHz.
How large is the physical footprint of the core area?
The core area of this dual-channel power amplifier is highly compact, measuring just 0.3 mm², which is ideal for high-density layouts.
What are the primary target applications for this CMOS PA?
It is primarily designed for high-density Ka-band satellite terminals and 5G millimeter-wave (mmWave) beamforming arrays.
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