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High-Power Ka-band Dual-Channel Amplifier from China Suppliers | Reliable Factory Solutions for Communication Systems
This 65nm CMOS dual-channel PA combines high integration with 25.8 dB gain across 35-41 GHz. Featuring a compact 0.3 mm² footprint and 21.4 dBm output, it is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
| Parameter | Specification |
|---|---|
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 35-41 |
| Gain (dB) @10 GHz | 25.8 |
| Psat(dBm) @38 GHz | 21.4 |
| OP1dB (dBm) @38 GHz | 19.8 |
| PAEmax(%) @38 GHz | 21.9 |
| Core Area (mm²) | 0.3 |
What process technology is used for this Power Amplifier?
This dual-channel Power Amplifier (PA) is fabricated using a highly integrated 65nm CMOS process.
What is the operating frequency range of the device?
The device operates across a high-frequency range of 35 GHz to 41 GHz, making it suitable for Ka-band applications.
What are the key output power specifications at 38 GHz?
At 38 GHz, the PA delivers a saturated output power (Psat) of 21.4 dBm and an output 1dB compression point (OP1dB) of 19.8 dBm.
How compact is the core footprint of this PA?
The Power Amplifier features an ultra-compact core area of just 0.3 mm², allowing for high-density integration.
What is the maximum efficiency of the Power Amplifier?
The device achieves a maximum Power Added Efficiency (PAEmax) of 21.9% at the operating frequency of 38 GHz.
What are the primary applications for this device?
It is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
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