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Ka-band Asymmetric Doherty Power Amplifier from China Suppliers - High Efficiency Factory Solutions for RF Applications
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 35-41 |
| Gain (dB) @10 GHz | 25 |
| Psat (dBm) @38 GHz | 23.3 |
| OP1dB (dBm) @38 GHz | 22.4 |
| PAEmax (%) @38 GHz | 28.2 |
| Core Area (mm²) | 0.26 |
Product Overview
Featuring a compact 0.26 mm² footprint, this 65nm CMOS Doherty PA delivers high efficiency (28.2% PAE) and linearity. Optimized for 35-41 GHz, it is ideal for cost-effective 5G mmWave and satellite phased array applications.
Frequently Asked Questions
What semiconductor process is used for this Doherty PA?
This power amplifier is fabricated using a advanced 65nm CMOS process, which balances cost-effectiveness with high-frequency performance.
What is the operating frequency range of this amplifier?
The device is optimized to operate within the 35 GHz to 41 GHz frequency range, making it ideal for mmWave designs.
What are the output power capabilities (Psat and OP1dB) at 38 GHz?
At 38 GHz, the saturated output power (Psat) is 23.3 dBm, and the 1-dB compression point (OP1dB) is 22.4 dBm.
What is the maximum Power Added Efficiency (PAEmax) of this chip?
This CMOS Doherty PA delivers a high peak Power Added Efficiency (PAEmax) of 28.2% at 38 GHz.
How compact is the physical core area of the amplifier?
The amplifier occupies an ultra-compact core footprint of only 0.26 mm², allowing for easy integration into high-density arrays.
What are the primary applications for this Doherty PA?
It is designed for cost-effective 5G mmWave communication infrastructure and satellite phased array antenna systems.
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