Ka-band Dual-Channel Combined High-Power Amplifer
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 35-41 |
| Gain (dB) @10 GHz | 25.8 |
| Psat(dBm) @38 GHz | 21.4 |
| OP1dB (dBm) @38 GHz | 19.8 |
| PAEmax(%) @38 GHz | 21.9 |
| Core Area (mm²) | 0.3 |
This 65nm CMOS dual-channel PA combines high integration with 25.8 dB gain across 35-41 GHz. Featuring a compact 0.3 mm² footprint and 21.4 dBm output, it is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
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