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Ka-band Dual-Channel Combined High-Power Amplifer

The Ka-band Dual-Channel Combined High-Power Amplifier is designed for advanced microwave and millimeter-wave communication systems requiring high output power, wide bandwidth, and stable performance. Featuring two independent amplification channels with power-combining architecture, it delivers enhanced output efficiency and superior linearity across the entire Ka-band. The amplifier integrates low-loss combining networks, high-reliability power devices, and an optimized thermal design to ensure long-term stable operation. It is ideal for satellite communication terminals, radar systems, phased-array antennas, and high-power RF front-end modules, providing robust performance in demanding communication environments.


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    Process  65nm CMOS 
    Operating Frequency (GHz) 35-41
    Gain (dB) @10 GHz  25.8 
    Psat(dBm) @38 GHz  21.4
    OP1dB (dBm) @38 GHz  19.8
    PAEmax(%) @38 GHz  21.9
    Core Area (mm²)  0.3

    This 65nm CMOS dual-channel PA combines high integration with 25.8 dB gain across 35-41 GHz. Featuring a compact 0.3 mm² footprint and 21.4 dBm output, it is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.

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