LTCC
MLCC
Ka-band Dual-Channel High-Power Amplifier - China Suppliers & Factory for Advanced Communication Systems
This 65nm CMOS dual-channel PA combines high integration with 25.8 dB gain across 35-41 GHz. Featuring a compact 0.3 mm² footprint and 21.4 dBm output, it is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
| Parameter | Specification |
|---|---|
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 35-41 |
| Gain (dB) @10 GHz | 25.8 |
| Psat(dBm) @38 GHz | 21.4 |
| OP1dB (dBm) @38 GHz | 19.8 |
| PAEmax(%) @38 GHz | 21.9 |
| Core Area (mm²) | 0.3 |
Frequently Asked Questions
What process technology is used for this dual-channel PA?
This dual-channel power amplifier is fabricated using a 65nm CMOS process, enabling a highly integrated and compact design.
What is the operating frequency range of this device?
The operating frequency range of this power amplifier is 35 GHz to 41 GHz.
What are the output power and efficiency levels at 38 GHz?
At 38 GHz, the PA delivers a saturated output power (Psat) of 21.4 dBm, an output 1 dB compression point (OP1dB) of 19.8 dBm, and a maximum power-added efficiency (PAEmax) of 21.9%.
How large is the core area of this power amplifier?
The device features an extremely compact footprint with a core area of only 0.3 mm².
What are the primary applications for this CMOS PA?
It is ideal for cost-efficient, high-density Ka-band satellite terminals and 5G mmWave beamforming arrays.
Get in touch
Your email address will not be published. Required fields are marked *