X-band High Gain Low-Noise Amplifer
| Process | 65nm CMOS |
| Operating Frequency (GHz) | 8.5-11.5 |
| Gain (dB) @10 GHz | 22.9 |
| Noise Figure (dB) @10 GHz | 2.8 |
| Power Consumption (mW) | 49 |
| Core Area (mm²) | 0.24 |
This 65nm CMOS LNA delivers a high 22.9 dB gain and low 49 mW power consumption in an ultra-compact 0.24 mm² design. Ensuring superior signal sensitivity and efficient integration, it is an ideal solution for cost-effective X-band phased array radars, satellite communication receivers, and wireless systems.
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